advanced power n-channel enhancement mode electronics corp. power mosfet g-s diode embedded bv dss 20v capable of 2.5v gate drive r ds(on) 14m surface mount package i d 40a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 4 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice 200523061-1/4 AP9T18GEH/j pb free plating product parameter rating drain-source voltage 20 gate-source voltage 12 continuous drain current, v gs @ 4.5v 40 continuous drain current, v gs @ 4.5v 25 pulsed drain current 1 160 total power dissipation 31 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.25 thermal data parameter storage temperature range the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g d s to-252(h) s g d g d s to-251(j)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance v gs =4.5v, i d =20a - - 14 m v gs =2.5v, i d =10a - - 28 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.4 - 1.5 v g fs forward transconductance v ds =5v, i d =20a - 20 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =16v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =12v - - 30 ua q g total gate charge 2 i d =20a - 16 26 nc q gs gate-source charge v ds =16v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =10v - 8 - ns t r rise time i d =20a - 84 - ns t d(off) turn-off delay time r g =1.0 , v gs =5v - 19 - ns t f fall time r d =0.5 -14- ns c iss input capacitance v gs =0v - 1080 1730 pf c oss output capacitance v ds =20v - 205 - pf c rss reverse transfer capacitance f=1.0mhz - 145 - pf r g gate resistance f=1.0mhz - 3.6 5.4 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =20a, v gs =0 v , - 26 - ns q rr reverse recovery charge di/dt=100a/s - 19 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 2/4 AP9T18GEH/j
AP9T18GEH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. on-resistance vs. reverse diode drain current 3/4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =4.5v 0 20 40 60 80 100 120 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v 4.5v 3.5v 2.5v v g =1.5v 0 10 20 30 40 50 60 70 80 90 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 5.0v 4.5v 3.5v 2.5v v g =1.5v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10 20 30 40 1 1.5 2 2.5 3 3.5 4 4.5 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =10a t c =25 o c 0.0 10.0 20.0 30.0 40.0 0 10203040506070 i d , drain current (a) r ds(on) (m ? ) v gs =4.5v v gs =2.5v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 AP9T18GEH/j 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 14 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =10v v ds =12v v ds =16v q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc 0 20 40 60 80 012345 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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